收藏本站
Preliminary Technical Information
TrenchMV TM
Power MOSFET
IXTP64N055T
IXTY64N055T
V DSS =
I D25 =
R DS(on) ≤
55 V
64 A
13 m Ω
N-Channel Enhancement Mode
Avalanche Rated
TO-220 (IXTP)
Symbol
Test Conditions
Maximum Ratings
G
D S
D (TAB)
V DSS
V DGR
V GSM
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C; R GS = 1 M Ω
Transient
55
55
± 20
V
V
V
TO-252 (IXTY)
I D25
I L
I DM
I AR
E AS
T C = 25 ° C
Package Current Limit, RMS TO-252
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
64
25
170
10
250
A
A
A
A
mJ
G
G = Gate
S = Source
S
D (TAB)
D = Drain
TAB = Drain
dv/dt
P D
T J
T JM
T stg
T L
T SOLD
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS
T J ≤ 175 ° C, R G = 18 Ω
T C = 25 ° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
3
130
-55 ... +175
175
-55 ... +175
300
260
V/ns
W
° C
° C
° C
° C
° C
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Advantages
Easy to mount
M d
Mounting torque (TO-220)
1.13 / 10 Nm/lb.in.
Space savings
Weight
TO-220
TO-252
3
0.35
g
g
High power density
Applications
Automotive
- Motor Drives
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
- High Side Switch
- 12V Battery
- ABS Systems
BV DSS
V GS = 0 V, I D = 250 μ A
55
V
DC/DC Converters and Off-line UPS
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 25 μ A
V GS = ± 20 V, V DS = 0 V
V DS = V DSS
V GS = 0 V
T J = 150 ° C
2.0
4.0
± 100
1
100
V
nA
μ A
μ A
Primary- Side Switch
High Current Switching
Applications
R DS(on)
V GS = 10 V, I D = 0.5 I D25 , Notes 1, 2
13
m Ω
DS99498 (11/06)
? 2006 IXYS CORPORATION All rights reserved
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
IXTP70N085T MOSFET N-CH 85V 70A TO-220
IXTP7N60PM MOSFET N-CH 600V 4A TO-220
IXTP7N60P MOSFET N-CH 600V 7A TO-220
IXTP8N50PM MOSFET N-CH 500V 4A TO-220
IXTP8N50P MOSFET N-CH 500V 8A TO-220
IXTQ102N15T MOSFET N-CH 150V 102A TO-3P
IXTQ110N055P MOSFET N-CH 55V 110A TO-3P
IXTQ140N10P MOSFET N-CH 100V 140A TO-3P
相关代理商/技术参数
IXTP6N100D2 功能描述:MOSFET N-CH MOSFETS (D2) 1000V 6A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTP6N50D2 功能描述:MOSFET N-CH MOSFETS (D2) 500V 6A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTP6N50P 功能描述:MOSFET 6 Amps 500V 1.1 Ohms Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTP6N60 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6A I(D) | TO-220AB
IXTP6N60A 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6A I(D) | TO-220AB
IXTP6P25 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 250V V(BR)DSS | 6A I(D) | TO-220
IXTP70N075T2 功能描述:MOSFET 70 Amps 75V 0.0120 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTP70N085T 功能描述:MOSFET MOSFET Id70 BVdass85 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube